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Optimized process conditions for high quality gate oxides on SIMOX SOI substrates
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Published in: | Journal of the Electrochemical Society 1999, Vol.146 (1), p.281-285 |
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Language: | English |
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container_end_page | 285 |
container_issue | 1 |
container_start_page | 281 |
container_title | Journal of the Electrochemical Society |
container_volume | 146 |
creator | SEO, J.-H WOO, J. C MASZARA, W. P |
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doi_str_mv | 10.1149/1.1391600 |
format | article |
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ispartof | Journal of the Electrochemical Society, 1999, Vol.146 (1), p.281-285 |
issn | 0013-4651 1945-7111 |
language | eng |
recordid | cdi_crossref_primary_10_1149_1_1391600 |
source | Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List) |
subjects | Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
title | Optimized process conditions for high quality gate oxides on SIMOX SOI substrates |
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