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Control of polysilicon surface topography in a high selectivity chemical mechanical polishing process

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Published in:Journal of the Electrochemical Society 1999-03, Vol.146 (3), p.1158-1162
Main Authors: FANG, S. J, UKRAINTSEV, V. A, U, E, EDWARDS, H, STECKENRIDER, S
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Language:English
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container_title Journal of the Electrochemical Society
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creator FANG, S. J
UKRAINTSEV, V. A
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EDWARDS, H
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doi_str_mv 10.1149/1.1391738
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ispartof Journal of the Electrochemical Society, 1999-03, Vol.146 (3), p.1158-1162
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1945-7111
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source Institute of Physics
subjects Applied sciences
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Materials science
Microelectronic fabrication (materials and surfaces technology)
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Surface treatments
title Control of polysilicon surface topography in a high selectivity chemical mechanical polishing process
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