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Control of polysilicon surface topography in a high selectivity chemical mechanical polishing process
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Published in: | Journal of the Electrochemical Society 1999-03, Vol.146 (3), p.1158-1162 |
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Main Authors: | , , , , |
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Language: | English |
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container_end_page | 1162 |
container_issue | 3 |
container_start_page | 1158 |
container_title | Journal of the Electrochemical Society |
container_volume | 146 |
creator | FANG, S. J UKRAINTSEV, V. A U, E EDWARDS, H STECKENRIDER, S |
description | |
doi_str_mv | 10.1149/1.1391738 |
format | article |
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identifier | ISSN: 0013-4651 |
ispartof | Journal of the Electrochemical Society, 1999-03, Vol.146 (3), p.1158-1162 |
issn | 0013-4651 1945-7111 |
language | eng |
recordid | cdi_crossref_primary_10_1149_1_1391738 |
source | Institute of Physics |
subjects | Applied sciences Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Materials science Microelectronic fabrication (materials and surfaces technology) Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Surface treatments |
title | Control of polysilicon surface topography in a high selectivity chemical mechanical polishing process |
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