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Modeling microdefect formation in Czochralski silicon
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Published in: | Journal of the Electrochemical Society 1999-06, Vol.146 (6), p.2300-2312 |
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Main Authors: | , |
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Language: | English |
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cited_by | cdi_FETCH-LOGICAL-c256t-5aec20bcaf4741c2ecfd5b29e6c13fc64c35903465ad8f3cc78df717a51f7a323 |
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container_end_page | 2312 |
container_issue | 6 |
container_start_page | 2300 |
container_title | Journal of the Electrochemical Society |
container_volume | 146 |
creator | SINNO, T BROWN, R. A |
description | |
doi_str_mv | 10.1149/1.1391931 |
format | article |
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fulltext | fulltext |
identifier | ISSN: 0013-4651 |
ispartof | Journal of the Electrochemical Society, 1999-06, Vol.146 (6), p.2300-2312 |
issn | 0013-4651 1945-7111 |
language | eng |
recordid | cdi_crossref_primary_10_1149_1_1391931 |
source | Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List) |
subjects | Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
title | Modeling microdefect formation in Czochralski silicon |
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