Effects of the final oxidation step on N and O distributions in silicon oxide/nitride/oxide ultrathin films

Saved in:
Bibliographic Details
Published in:Journal of the Electrochemical Society 1999-10, Vol.146 (10), p.3788-3793
Main Authors: SALGADO, T. D. M, RADTKE, C, KRUG, C, DE ANDRADE, J, BAUMVOL, I. J. R
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0013-4651
1945-7111
DOI:10.1149/1.1392551