Properties of Low-k Copper Barrier SiOCH Film Deposited by PECVD Using Hexamethyldisiloxane and N[sub 2]O

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2003, Vol.150 (5), p.F83
Main Authors: Ishimaru, Tomomi, Shioya, Yoshimi, Ikakura, Hiroshi, Nozawa, Mamoru, Ohgawara, Shoji, Ohdaira, Toshiyuki, Suzuki, Ryoichi, Maeda, Kazuo
Format: Article
Language:English
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ISSN:0013-4651
DOI:10.1149/1.1562600