HfSiO[sub 4] Dielectric Layers Deposited by ALD Using HfCl[sub 4] and NH[sub 2](CH[sub 2])[sub 3]Si(OC[sub 2]H[sub 5])[sub 3] Precursors

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2004, Vol.151 (11), p.C716
Main Authors: Rittersma, Z. M., Roozeboom, F., Verheijen, M. A., van Berkum, J. G. M., Dao, T., Snijders, J. H. M., Vainonen-Ahlgren, E., Tois, E., Tuominen, M., Haukka, S.
Format: Article
Language:eng ; jpn
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ISSN:0013-4651
DOI:10.1149/1.1803571