A 0.25 μm MOSFET technology using in situ rapid thermal gate dielectrics

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Bibliographic Details
Published in:Journal of the Electrochemical Society 1996-02, Vol.143 (2), p.744-749
Main Authors: ZHANG, K. X, OSBURN, C. M, HAMES, G, PARKER, C, BAYOUMI, A
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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ISSN:0013-4651
1945-7111
DOI:10.1149/1.1836511