Transmission electron microscopy and spectroscopic ellipsometry studies of damage layer induced by large tilt angle ion implantation

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Published in:Journal of the Electrochemical Society 1996-08, Vol.143 (8), p.2636-2640
Main Authors: HE, Z, CRISTIANO, F, ZHOU, Z, QIAN, Y, CHEN, L, LIN, C, HEMMENT, P. L. F, ZOU, S
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Doping and impurity implantation in germanium and silicon
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
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cited_by cdi_FETCH-LOGICAL-c256t-848355c936639d991819809df42163c064d26e551083033a0826c04d5f9f65f13
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container_issue 8
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container_title Journal of the Electrochemical Society
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creator HE, Z
CRISTIANO, F
ZHOU, Z
QIAN, Y
CHEN, L
LIN, C
HEMMENT, P. L. F
ZOU, S
description
doi_str_mv 10.1149/1.1837061
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ispartof Journal of the Electrochemical Society, 1996-08, Vol.143 (8), p.2636-2640
issn 0013-4651
1945-7111
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source Institute of Physics
subjects Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Doping and impurity implantation in germanium and silicon
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
title Transmission electron microscopy and spectroscopic ellipsometry studies of damage layer induced by large tilt angle ion implantation
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