Influence of the grain boundaries and intragrain defects on the performance of poly-Si thin film transistors

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Bibliographic Details
Published in:Journal of the Electrochemical Society 1997-07, Vol.144 (7), p.2495-2501
Main Authors: MORIMOTO, Y, JINNO, Y, HIRAI, K, OGATA, H, YAMADA, T, YONEDA, K
Format: Article
Language:English
Subjects:
Applied sciences
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Electronics
Exact sciences and technology
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ISSN:0013-4651
1945-7111
DOI:10.1149/1.1837843