Reliability improvement of AlInAs/GaInAs high electron mobility transistors by fluorine incorporation control

Saved in:
Bibliographic Details
Published in:Journal of the Electrochemical Society 1998, Vol.145 (8), p.2951-2954
Main Authors: HAYAFUJI, N, YAMAMOTO, Y, ISHIDA, T, SATO, K
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0013-4651
1945-7111
DOI:10.1149/1.1838742