Comparison of etch pit distributions and cathodoluminescence images in semi-insulating GaAs

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Published in:Journal of the Electrochemical Society 1991-10, Vol.138 (10), p.3120-3125
Main Authors: ROEDEL, R. J, ROWLEY, K, EDWARDS, J. L, MYHAIJLENKO, S
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
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cited_by cdi_FETCH-LOGICAL-c171t-a0943826a4a570f00d41ac1b9c25a24116dd2637f8dacc92f6281a1954e94a313
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container_end_page 3125
container_issue 10
container_start_page 3120
container_title Journal of the Electrochemical Society
container_volume 138
creator ROEDEL, R. J
ROWLEY, K
EDWARDS, J. L
MYHAIJLENKO, S
description
doi_str_mv 10.1149/1.2085379
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ispartof Journal of the Electrochemical Society, 1991-10, Vol.138 (10), p.3120-3125
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1945-7111
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source Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
subjects Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
title Comparison of etch pit distributions and cathodoluminescence images in semi-insulating GaAs
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