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Oxygen precipitation in heavily doped silicon

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Bibliographic Details
Published in:	Journal of the Electrochemical Society 1990-02, Vol.137 (2), p.647-652
Main Authors:	BAINS, S. K, GRIFFITHS, D. P, WILKES, J. G, SERIES, R. W, BARRACLOUGH, K. G
Format:	Article
Language:	English
Subjects:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Exact sciences and technology Physics Structure of solids and liquids crystallography
Citations:	Items that cite this one
Online Access:	Get full text
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