GeMoW Refractory Ohmic Contact for GaAs / GaAlAs Self‐Aligned Heterojunction Bipolar Transistors

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Bibliographic Details
Published in:Journal of the Electrochemical Society 1990-05, Vol.137 (5), p.1514-1519
Main Authors: Dubon‐Chevallier, C., Blanconnier, P., Besombes, C., Mayeux, C., Bresse, J. F., Henoc, P., Gao, Y.
Format: Article
Language:English
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ISSN:0013-4651
1945-7111
DOI:10.1149/1.2086703