Chemical nature of silicon nitride-indium phosphide interface and rapid thermal annealing for InP MISFETs

A rapid thermal annealing (RTA) process in pure N2 or pure H2 was developed for ion-implanted and encapsulated indium phosphide compound semiconductors, and the chemical nature at the silicon nitride-InP interface before and after RTA was examined using XPS. Results obtained from SIMS on the atomic...

Full description

Saved in:
Bibliographic Details
Published in:Journal of the Electrochemical Society 1990-05, Vol.137 (5), p.1537-1547
Main Authors: Biedenbender, M. D., Kapoor, V. J.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Electronics And Electrical Engineering
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A rapid thermal annealing (RTA) process in pure N2 or pure H2 was developed for ion-implanted and encapsulated indium phosphide compound semiconductors, and the chemical nature at the silicon nitride-InP interface before and after RTA was examined using XPS. Results obtained from SIMS on the atomic concentration profiles of the implanted silicon in InP before and after RTA are presented, together with electrical characteristics of the annealed implants. Using the RTA process developed, InP metal-insulator semiconductor FETs (MISFETS) were fabricated. The MISFETS prepared had threshold voltages of +1 V, transconductance of 27 mS/mm, peak channel mobility of 1200 sq cm/V per sec, and drain current drift of only 7 percent.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.2086708