Loading…

Plasma deposited silicon nitride for gallium arsenide encapsulation

Saved in:

Bibliographic Details
Published in:	Journal of the Electrochemical Society 1987-03, Vol.134 (3), p.685-692
Main Authors:	VALCO, G. J, KAPOOR, V. J
Format:	Article
Language:	English
Subjects:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
Citations:	Items that cite this one
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!