Plasma deposited silicon nitride for gallium arsenide encapsulation

Saved in:
Bibliographic Details
Published in:Journal of the Electrochemical Society 1987-03, Vol.134 (3), p.685-692
Main Authors: VALCO, G. J, KAPOOR, V. J
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c256t-4939cdf39664d525a9360d34de30b8319d59d6d46651ca8af550bc38ef8d11633
cites
container_end_page 692
container_issue 3
container_start_page 685
container_title Journal of the Electrochemical Society
container_volume 134
creator VALCO, G. J
KAPOOR, V. J
description
doi_str_mv 10.1149/1.2100532
format article
fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_2100532</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>7421120</sourcerecordid><originalsourceid>FETCH-LOGICAL-c256t-4939cdf39664d525a9360d34de30b8319d59d6d46651ca8af550bc38ef8d11633</originalsourceid><addsrcrecordid>eNo9T0tLxDAYDKJgXT34D3Lw4qFrvrzaHKX4ggU96Ll8m4dEsm1Jugf_vV128TTMMDPMEHILbA0gzQOsOTCmBD8jFRip6gYAzknFGIhaagWX5KqUn4VCK5uKdB8Jyw6p89NY4uwdLTFFOw50iHOOztMwZvqNKcX9jmIufjiIfrA4lX3COY7DNbkImIq_OeGKfD0_fXav9eb95a173NSWKz3X0ghjXRBGa-kUV2iEZk5I5wXbtgKMU8ZpJ_Wy0mKLQSm2taL1oXUAWogVuT_22jyWkn3opxx3mH97YP3hfQ_96f3ivTt6JywWU8g42Fj-A43kAJyJP89EWI8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Plasma deposited silicon nitride for gallium arsenide encapsulation</title><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>VALCO, G. J ; KAPOOR, V. J</creator><creatorcontrib>VALCO, G. J ; KAPOOR, V. J</creatorcontrib><identifier>ISSN: 0013-4651</identifier><identifier>EISSN: 1945-7111</identifier><identifier>DOI: 10.1149/1.2100532</identifier><identifier>CODEN: JESOAN</identifier><language>eng</language><publisher>Pennington, NJ: Electrochemical Society</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Journal of the Electrochemical Society, 1987-03, Vol.134 (3), p.685-692</ispartof><rights>1988 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c256t-4939cdf39664d525a9360d34de30b8319d59d6d46651ca8af550bc38ef8d11633</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=7421120$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>VALCO, G. J</creatorcontrib><creatorcontrib>KAPOOR, V. J</creatorcontrib><title>Plasma deposited silicon nitride for gallium arsenide encapsulation</title><title>Journal of the Electrochemical Society</title><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1987</creationdate><recordtype>article</recordtype><recordid>eNo9T0tLxDAYDKJgXT34D3Lw4qFrvrzaHKX4ggU96Ll8m4dEsm1Jugf_vV128TTMMDPMEHILbA0gzQOsOTCmBD8jFRip6gYAzknFGIhaagWX5KqUn4VCK5uKdB8Jyw6p89NY4uwdLTFFOw50iHOOztMwZvqNKcX9jmIufjiIfrA4lX3COY7DNbkImIq_OeGKfD0_fXav9eb95a173NSWKz3X0ghjXRBGa-kUV2iEZk5I5wXbtgKMU8ZpJ_Wy0mKLQSm2taL1oXUAWogVuT_22jyWkn3opxx3mH97YP3hfQ_96f3ivTt6JywWU8g42Fj-A43kAJyJP89EWI8</recordid><startdate>19870301</startdate><enddate>19870301</enddate><creator>VALCO, G. J</creator><creator>KAPOOR, V. J</creator><general>Electrochemical Society</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19870301</creationdate><title>Plasma deposited silicon nitride for gallium arsenide encapsulation</title><author>VALCO, G. J ; KAPOOR, V. J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c256t-4939cdf39664d525a9360d34de30b8319d59d6d46651ca8af550bc38ef8d11633</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1987</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>VALCO, G. J</creatorcontrib><creatorcontrib>KAPOOR, V. J</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>VALCO, G. J</au><au>KAPOOR, V. J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Plasma deposited silicon nitride for gallium arsenide encapsulation</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>1987-03-01</date><risdate>1987</risdate><volume>134</volume><issue>3</issue><spage>685</spage><epage>692</epage><pages>685-692</pages><issn>0013-4651</issn><eissn>1945-7111</eissn><coden>JESOAN</coden><cop>Pennington, NJ</cop><pub>Electrochemical Society</pub><doi>10.1149/1.2100532</doi><tpages>8</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0013-4651
ispartof Journal of the Electrochemical Society, 1987-03, Vol.134 (3), p.685-692
issn 0013-4651
1945-7111
language eng
recordid cdi_crossref_primary_10_1149_1_2100532
source Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
subjects Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
title Plasma deposited silicon nitride for gallium arsenide encapsulation
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T04%3A01%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Plasma%20deposited%20silicon%20nitride%20for%20gallium%20arsenide%20encapsulation&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=VALCO,%20G.%20J&rft.date=1987-03-01&rft.volume=134&rft.issue=3&rft.spage=685&rft.epage=692&rft.pages=685-692&rft.issn=0013-4651&rft.eissn=1945-7111&rft.coden=JESOAN&rft_id=info:doi/10.1149/1.2100532&rft_dat=%3Cpascalfrancis_cross%3E7421120%3C/pascalfrancis_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c256t-4939cdf39664d525a9360d34de30b8319d59d6d46651ca8af550bc38ef8d11633%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true