Effect of Group V/III Flux Ratio on Lightly Si‐Doped Al x Ga1 − x As Grown by Molecular Beam Epitaxy

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Bibliographic Details
Published in:Journal of the Electrochemical Society 1984-11, Vol.131 (11), p.2630-2633
Main Authors: Nomura, Y., Mannoh, M., Mihara, M., Naritsuka, S., Yamanaka, K., Yuasa, T., Ishii, M.
Format: Article
Language:eng ; jpn
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ISSN:0013-4651
1945-7111
DOI:10.1149/1.2115373