Study of electrical characteristics on thermally nitrided SiO2 (nitroxide) films

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Published in:Journal of the Electrochemical Society 1984-04, Vol.131 (4), p.875-877
Main Authors: CHEN, C.-T, TSENG, F.-C, CHANG, C.-Y, LEE, M.-K
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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cited_by cdi_FETCH-LOGICAL-c322t-23c19f06cf2922acaf8e97ff72e4badbc2b0157af87fc57276ebd9d73271bd483
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container_end_page 877
container_issue 4
container_start_page 875
container_title Journal of the Electrochemical Society
container_volume 131
creator CHEN, C.-T
TSENG, F.-C
CHANG, C.-Y
LEE, M.-K
description
doi_str_mv 10.1149/1.2115718
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ispartof Journal of the Electrochemical Society, 1984-04, Vol.131 (4), p.875-877
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1945-7111
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source Institute of Physics
subjects Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Study of electrical characteristics on thermally nitrided SiO2 (nitroxide) films
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