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Free carrier reduction in vacuum-annealed S-, Sn-, and Ge-doped (100) InP

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Bibliographic Details
Published in:Journal of the Electrochemical Society 1984-07, Vol.131 (7), p.1716-1720
Main Authors: SCHWARTZ, G. P, GUALTIERI, G. J, DUBOIS, L. H, BONNER, W. A, BALLMAN, A. A
Format: Article
Language:English
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ISSN:0013-4651
1945-7111
DOI:10.1149/1.2115945