Reactive ion etching of silicon with Cl2/Ar(1)

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Published in:Journal of the Electrochemical Society 1983-01, Vol.130 (7), p.1592-1597
Main Authors: POGGE, H. B, BONDUR, J. A, BURKHARDT, P. J
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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cited_by cdi_FETCH-LOGICAL-c256t-ffb82ba2c0c519bd127e2298f18f38d2a96ed49fc3b7539f30e2321c3cc92fae3
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container_end_page 1597
container_issue 7
container_start_page 1592
container_title Journal of the Electrochemical Society
container_volume 130
creator POGGE, H. B
BONDUR, J. A
BURKHARDT, P. J
description
doi_str_mv 10.1149/1.2120040
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ispartof Journal of the Electrochemical Society, 1983-01, Vol.130 (7), p.1592-1597
issn 0013-4651
1945-7111
language eng
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source Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
subjects Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Reactive ion etching of silicon with Cl2/Ar(1)
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