On the Removal of Insulator Process Induced Radiation Damage from Insulated Gate Field Effect Transistors at Elevated Pressure

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Bibliographic Details
Published in:Journal of the Electrochemical Society 1981-01, Vol.128 (7), p.1616-1619
Main Authors: Reisman, A., Aitken, J. M., Ray, A. K., Berkenblit, M., Merz, C. J., Havreluk, R. P.
Format: Article
Language:English
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ISSN:0013-4651
1945-7111
DOI:10.1149/1.2127693