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Modeling and Engineering of Hafnium Silicate (HfSiO) Gate Dielectrics Deposited by Nano-Laminated Atomic-Layer Deposition (NL-ALD)
A semi-empirical, stacked capacitor model was developed to calculate the dielectric constants (k) and deposition rates of hafnium silicate (HfSiO) deposited by nano-laminated atomic layer deposition (NL-ALD) from the HfO2 and SiO2 ALD cycles (m and n, respectively). The calculations agree well with...
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Published in: | ECS transactions 2006-07, Vol.1 (10), p.113-123 |
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container_title | ECS transactions |
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creator | Chang, Vincent S. Hou, Y.T. Hsu, P.F. Lim, P.S. Yao, L.G. Yen, F.Y. Hung, C.L. Lin, H.J. Jiang, J.C. Jin, Y. Chen, C.C. Tao, H.J. Chen, S.C. Jang, S.M. Liang, Mong-Song |
description | A semi-empirical, stacked capacitor model was developed to calculate the dielectric constants (k) and deposition rates of hafnium silicate (HfSiO) deposited by nano-laminated atomic layer deposition (NL-ALD) from the HfO2 and SiO2 ALD cycles (m and n, respectively). The calculations agree well with the experimental data, with an accuracy of 90%. The model enables the deposition of HfSiO with desired thicknesses and any dielectric constants ranging from 7 to 19 using proper combinations of m and n. The systematic study on the effects of various combinations of m and n that give similar dielectric constants showed that increasing m and n enhances the dielectric scalability due to less defects formed at the high- k/IL oxide interface during NL-ALD, but degrades the electrical stability due to more severe charge trapping. Changing m and n has no significant effect on thermal stability and electron mobility. |
doi_str_mv | 10.1149/1.2209336 |
format | article |
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The calculations agree well with the experimental data, with an accuracy of 90%. The model enables the deposition of HfSiO with desired thicknesses and any dielectric constants ranging from 7 to 19 using proper combinations of m and n. The systematic study on the effects of various combinations of m and n that give similar dielectric constants showed that increasing m and n enhances the dielectric scalability due to less defects formed at the high- k/IL oxide interface during NL-ALD, but degrades the electrical stability due to more severe charge trapping. Changing m and n has no significant effect on thermal stability and electron mobility.</abstract><doi>10.1149/1.2209336</doi><tpages>11</tpages></addata></record> |
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title | Modeling and Engineering of Hafnium Silicate (HfSiO) Gate Dielectrics Deposited by Nano-Laminated Atomic-Layer Deposition (NL-ALD) |
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