Electrografting, A Unique Wet Technology for Seed and Direct Plating in Copper Metallization

This paper introduces a novel electrochemical technology called electrografting (eG{trade mark, serif}). After describing electrografting the main characteristics, it will be shown that this technology can be successfully applied to the formation of thin, conformal, and uniform seed layers for IC co...

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Bibliographic Details
Main Authors: Gonzalez, Jose, Raynal, Frédéric, Monchoix, Hervé, Ben Hamida, Abdeslem, Daviot, Jerome, Rabinzohn, Patrick, Bureau, Christophe
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:This paper introduces a novel electrochemical technology called electrografting (eG{trade mark, serif}). After describing electrografting the main characteristics, it will be shown that this technology can be successfully applied to the formation of thin, conformal, and uniform seed layers for IC copper interconnects. Seed layer thicknesses down to 10nm thick are deposited on various copper diffusion barrier materials and characterized in terms of sheet resistance, morphology, conformality, adhesion, and gapfilling capability. Initial results pointed out that the technology can be extended to seedless direct filling of interconnect structures.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2218487