Effect of Device Processing Conditions on Extended Dislocations and Defects in Ti‐Salicided Source/Drain Regions of Silicon Integrated Circuits

Saved in:
Bibliographic Details
Published in:Journal of the Electrochemical Society 1993-12, Vol.140 (12), p.3650-3657
Main Author: Guldi, R. L.
Format: Article
Language:English
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0013-4651
1945-7111
DOI:10.1149/1.2221144