Effect of Device Processing Conditions on Extended Dislocations and Defects in Ti‐Salicided Source/Drain Regions of Silicon Integrated Circuits

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Published in:Journal of the Electrochemical Society 1993-12, Vol.140 (12), p.3650-3657
Main Author: Guldi, R. L.
Format: Article
Language:English
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title Effect of Device Processing Conditions on Extended Dislocations and Defects in Ti‐Salicided Source/Drain Regions of Silicon Integrated Circuits
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