New Silicon-Based Materials for Spintronics Applications - Si:V and Si:Cr

We present here two new silicon-based materials for possible applications as spintronics materials. These materials are based on high dose ion implantation of transition metal ions, V+ or Cr+ into a single crystalline silicon wafer. After ion implantation, thermal anneals at high temperatures and hi...

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Bibliographic Details
Main Authors: Misiuk, Andrzej, Chow, Lee, Barcz, Adam, Surma, Barbara, Bak-Misiuk, Jadwiga, Romanowski, P.
Format: Conference Proceeding
Language:English
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Summary:We present here two new silicon-based materials for possible applications as spintronics materials. These materials are based on high dose ion implantation of transition metal ions, V+ or Cr+ into a single crystalline silicon wafer. After ion implantation, thermal anneals at high temperatures and high hydrostatic pressures are carried out in a high pressure chamber. Secondary ion mass spectrometry is used to characterize the re-distribution of the implanted atoms after thermal anneals; photoluminescence and X-ray techniques are applied to check microstructure of the samples. A variable temperature SQUID magnetometer is used to measure the magnetic properties of the processed samples. It is found that some of the samples showed ferromagnetic hysteresis loops at low temperatures. Implications of our findings are discussed in terms of future applications of spintronics materials based on ion-implanted silicon.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2355780