Strain Modeling in Advanced MOSFET Devices

Due to the success of using strain for performance gain in advanced logic technologies, strain engineering has become an important part of advanced transistor design. This paper presents process and device models that are used to provide understanding of process-induced stress such as the stress due...

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Bibliographic Details
Main Authors: Cea, Stephen, Ghani, Tahir, Giles, Martin, Kotlyar, Roza, Matagne, Philippe, Mistry, Kaizad, Obradovic, Borna, Shaheed, Reaz, Shifren, Lucian, Stettler, Mark, Tyagi, Sunit, Wang, Xiaoling, Weber, Cory, Keys, Patrick
Format: Conference Proceeding
Language:English
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Summary:Due to the success of using strain for performance gain in advanced logic technologies, strain engineering has become an important part of advanced transistor design. This paper presents process and device models that are used to provide understanding of process-induced stress such as the stress due to epitaxial SiGe source drains and nitride capping films and how that stress affects device performance.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2355840