High Mobility Strained Ge / SiGe PMOSFETs for High Performance CMOS

Dramatic hole mobility enhancement of 4-25X has been demonstrated in compressively strained Ge p-channel MOSFETs - the highest mobility enhancement for hole carriers among all available options. This paper reviews the material properties of strained Ge/SiGe and the integration challenges of strained...

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Bibliographic Details
Main Authors: Shang, Huiling, Chu, Jack O., Bedell, Stephen W., Ott, John
Format: Conference Proceeding
Language:English
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Summary:Dramatic hole mobility enhancement of 4-25X has been demonstrated in compressively strained Ge p-channel MOSFETs - the highest mobility enhancement for hole carriers among all available options. This paper reviews the material properties of strained Ge/SiGe and the integration challenges of strained Ge MOSFETs. A compatible process to incorporate high performance strained Ge PMOSFETs into standard CMOS technology is presented.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2355863