High Mobility Strained Ge / SiGe PMOSFETs for High Performance CMOS

Dramatic hole mobility enhancement of 4-25X has been demonstrated in compressively strained Ge p-channel MOSFETs - the highest mobility enhancement for hole carriers among all available options. This paper reviews the material properties of strained Ge/SiGe and the integration challenges of strained...

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Main Authors: Shang, Huiling, Chu, Jack O., Bedell, Stephen W., Ott, John
Format: Conference Proceeding
Language:English
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Bedell, Stephen W.
Ott, John
description Dramatic hole mobility enhancement of 4-25X has been demonstrated in compressively strained Ge p-channel MOSFETs - the highest mobility enhancement for hole carriers among all available options. This paper reviews the material properties of strained Ge/SiGe and the integration challenges of strained Ge MOSFETs. A compatible process to incorporate high performance strained Ge PMOSFETs into standard CMOS technology is presented.
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source Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
title High Mobility Strained Ge / SiGe PMOSFETs for High Performance CMOS
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