Thermal/Chemical Stability of ALD Ru-TaN Thin Films for Gate Electrode Applications

A low temperature atomic layer deposition (ALD) nanolaminate process was developed for the growth of Ru-TaN thin films with a controllable Ru:Ta elemental ratio. XPS analyses of the deposited films suggest the presence of Ru-Ta bonding along with the formation of Ta2O5. Ru-rich films with a resistiv...

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Bibliographic Details
Main Authors: Tungare, Mihir, Kumar, Sumit, Li, Min, Eisenbraun, Eric
Format: Conference Proceeding
Language:English
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Summary:A low temperature atomic layer deposition (ALD) nanolaminate process was developed for the growth of Ru-TaN thin films with a controllable Ru:Ta elemental ratio. XPS analyses of the deposited films suggest the presence of Ru-Ta bonding along with the formation of Ta2O5. Ru-rich films with a resistivity of ~150μΩ-cm and a RMS roughness of 0.78nm were found to possess a work function of 4.94eV{plus minus}0.17eV after RTA. These multicomponent films showed superior thermal and chemical stabilities when compared to pure Ru and TaN films grown under similar processing conditions and subjected to similar thermal treatments, and may be suitable for emerging CMOS gate applications.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2356290