The Role of Grain Boundaries on the Performance of Poly-Si TFTs

The role of grain boundaries on the performance of polycrystalline Si thin film transistors is investigated through the temperature analysis of the transfer characteristics. The investigation is performed on devices fabricated on films that consist of long grains, separated by parallel boundaries. T...

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Bibliographic Details
Main Authors: Michalas, Loukas K., Papaioannou, George J., Kouvatsos, Dimitrios N., Voutsas, Apostolos T.
Format: Conference Proceeding
Language:English
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Summary:The role of grain boundaries on the performance of polycrystalline Si thin film transistors is investigated through the temperature analysis of the transfer characteristics. The investigation is performed on devices fabricated on films that consist of long grains, separated by parallel boundaries. The transport properties are studied by employing channel orientations parallel and vertical to the grain boundaries. Finally, the data analysis reveals that the major device parameters are thermally activated.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2356339