Room-Temperature Sputter-Deposited Gate SiO2 Films for High Quality Poly-Si TFTs

Gate SiO2 films in poly-Si TFTs were fabricated by sputtering at substrate temperature from 300°C down to room-temperature. It was found that poly-Si TFT characteristics of mobility, threshold voltage and subthreshold slope were greatly improved by decreasing substrate temperature. Mobility of the p...

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Bibliographic Details
Main Authors: Serikawa, Tadashi, Miyamoto, Takamasa, Ueno, Hitoshi, Sugawara, Yuta, Uraoka, Y., Fuyuki, Takashi
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:Gate SiO2 films in poly-Si TFTs were fabricated by sputtering at substrate temperature from 300°C down to room-temperature. It was found that poly-Si TFT characteristics of mobility, threshold voltage and subthreshold slope were greatly improved by decreasing substrate temperature. Mobility of the poly-Si TFT for room-temperature was 90 cm2/V.s, much higher than 50 cm2/V.s for 300°C. Moreover, sputtered gate SiO2 poly-Si TFTs showed high reliability against hot carrier effect even for room-temperature-deposition.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2356342