Si-Based Resonant Tunneling Devices Using UHV Wafer Bonding

• Main Authors: Kim, Moon, Lee, Taehun, Kim, Jiyoung, Wallace, Robert M., Gnade, Bruce
• Format: Conference Proceeding
• Language: English
• ISSN: 1938-5862; 1938-6737
• DOI: 10.1149/1.2357056

While resonant tunneling-based quantum devices have been studied extensively in compound semiconductors, there has been limited work on silicon-based resonant tunneling diode (RTD) devices, especially with processes that are compatible with scaled silicon CMOS processing. The indirect band gap of Si (and Ge) results in significant challenges for these structures. In the case of RTDs, the biggest problem has been the ability to fabricate high quality dielectric - semiconductor interfaces, and high quality crystalline silicon quantum wells, at the dimensions required for resonant tunneling devices. To date, most approaches used to demonstrate siliconbased RTDs have been based on using single crystal, epitaxial dielectrics, with lattice constants similar to those of silicon, in order to allow for the growth of high quality, single crystal silicon for the quantum well. Past attempts to produce silicon-based resonant tunneling devices based on CaF2 barriers have been hampered by poor quality interfaces and the inability to grow high quality silicon on single crystal CaF2.