Barrier Height Enhancement of Al[sub x]Ga[sub 1−x]N∕GaN Schottky Diodes Prepared by P[sub 2]S[sub 5]∕(NH[sub 4])[sub 2]S Treatments

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Bibliographic Details
Published in:Electrochemical and solid-state letters 2007, Vol.10 (3), p.H79
Main Authors: Chang, Liann-Be, Chang, Chia-Hwa, Jeng, Ming-Jer, Chiu, Hsien-Chin, Kuo, Hung-Fei
Format: Article
Language:English
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ISSN:1099-0062
DOI:10.1149/1.2409059