Analytical Modeling of the Interaction of Vacancies and Oxygen for Oxide Precipitation in RTA Treated Silicon Wafers

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2007, Vol.154 (6), p.H454
Main Authors: Kissinger, G., Dabrowski, J., Sattler, A., Seuring, C., Müller, T., Richter, H., von Ammon, W.
Format: Article
Language:English
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ISSN:0013-4651
DOI:10.1149/1.2717492