Extra Low-Temperature SiO2 Deposition Using Aminosilanes

High quality SiO2 thin films were grown by atomic layer deposition using a newly considered silicon precursor, SAM24, an aminosilane, with an ozone/oxygen mixture. SAM24 is a liquid and has sufficient volatility (with a vapor pressure of 2 Torr at R.T.) and is therefore easy to deliver into the reac...

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Bibliographic Details
Published in:ECS transactions 2007-07, Vol.3 (15), p.119-128
Main Authors: Suzuki, Ikuo, Dussarrat, Christian, Yanagita, Kazutaka
Format: Article
Language:English
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Summary:High quality SiO2 thin films were grown by atomic layer deposition using a newly considered silicon precursor, SAM24, an aminosilane, with an ozone/oxygen mixture. SAM24 is a liquid and has sufficient volatility (with a vapor pressure of 2 Torr at R.T.) and is therefore easy to deliver into the reactor. Deposits obtained exhibit a very good thickness control when deposited as low as 100 ºC and up to 400 ºC at 1 Torr in a hot wall reactor.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2721480