The Study of Hafnium Silicate by NO Gas Annealing Treatment

The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas annealing, were investigated by XPS, NEXAFS, TEM and C-V measurement. We confirmed the nitrogen incorporation during NO gas annealing treatment effectively enhances the thermal stability of Hf-silicate. The...

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Main Authors: Suh, Dong Chan, Lee, Dongwon, Chung, Kwon Bum, Cho, Mann-Ho, Ko, Dae-Hong
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas annealing, were investigated by XPS, NEXAFS, TEM and C-V measurement. We confirmed the nitrogen incorporation during NO gas annealing treatment effectively enhances the thermal stability of Hf-silicate. The suppression of phase separation was observed in Hf-silicate films with high nitrogen contents. The negative shift of threshold voltage is caused by the incorporation of nitrogen in the hafnium silicate films.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2727396