High Quality Gate Dielectric Film on Poly-Silicon Grown at Room Temperature using UV Light Excited Ozone

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2007, Vol.154 (9), p.H769
Main Authors: Kameda, N., Nishiguchi, T., Morikawa, Y., Kekura, M., Nonaka, H., Ichimura, S.
Format: Article
Language:English
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ISSN:0013-4651
DOI:10.1149/1.2750517