X-Ray Metrology for the Semiconductor Industry

The scaling of traditional CMOS processes, and their associated metrologies, to produce smaller and faster devices was very successful down to the 90 nm node. However, to progress further, it has been found necessary to use novel materials, for which established metrologies are inadequate. In this a...

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Bibliographic Details
Main Authors: Bowen, Keith, Ryan, Paul
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:The scaling of traditional CMOS processes, and their associated metrologies, to produce smaller and faster devices was very successful down to the 90 nm node. However, to progress further, it has been found necessary to use novel materials, for which established metrologies are inadequate. In this article we demonstrate with examples that X-Ray Metrology (XRM) methods are particularly well-suited to provide characterization and measurement of the new materials systems being considered for advanced silicon processing, and for meeting the requirements of sub-90 nm nodes. These methods can be used for materials research, process development and integration and for in-line process control of product wafers.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2778669