Effect of Germanium Preamorphization Implant on Boron Deactivation in Silicon Following Multiple-Pulse Flash Annealing

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Bibliographic Details
Published in:Electrochemical and solid-state letters 2007, Vol.10 (12), p.H362
Main Authors: Poon, Chyiu Hyia, See, Alex, Tan, Yunling, Zhou, Meisheng, Gui, Dong
Format: Article
Language:English
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ISSN:1099-0062
DOI:10.1149/1.2791945