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High Voltage, Moderate Current Thin Film Transistor for Actuator Applications
An n-type multiple-gate laser-crystallized Poly-Silicon Thin Film Transistor (TFT) is introduced as a high voltage (Vg>30v, Vds>35v) moderate current (I=50mA) TFT structure for general purpose, matrix format actuator application on stainless steel substrate. The off-state performance of the de...
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Main Authors: | , , |
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Format: | Conference Proceeding |
Language: | English |
Citations: | Items that cite this one |
Online Access: | Get full text |
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Summary: | An n-type multiple-gate laser-crystallized Poly-Silicon Thin Film Transistor (TFT) is introduced as a high voltage (Vg>30v, Vds>35v) moderate current (I=50mA) TFT structure for general purpose, matrix format actuator application on stainless steel substrate. The off-state performance of the device has been simulated and studied by the Silvaco software package and the performance of the structure has been compared with the commonly used High Voltage (HV) TFT structures. |
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ISSN: | 1938-5862 1938-6737 |
DOI: | 10.1149/1.2902313 |