High Voltage, Moderate Current Thin Film Transistor for Actuator Applications

An n-type multiple-gate laser-crystallized Poly-Silicon Thin Film Transistor (TFT) is introduced as a high voltage (Vg>30v, Vds>35v) moderate current (I=50mA) TFT structure for general purpose, matrix format actuator application on stainless steel substrate. The off-state performance of the de...

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Main Authors: Jamshidi-Roudbari, Abbas, Kuo, Po-Chin, Hatalis, Miltiadis
Format: Conference Proceeding
Language:English
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creator Jamshidi-Roudbari, Abbas
Kuo, Po-Chin
Hatalis, Miltiadis
description An n-type multiple-gate laser-crystallized Poly-Silicon Thin Film Transistor (TFT) is introduced as a high voltage (Vg>30v, Vds>35v) moderate current (I=50mA) TFT structure for general purpose, matrix format actuator application on stainless steel substrate. The off-state performance of the device has been simulated and studied by the Silvaco software package and the performance of the structure has been compared with the commonly used High Voltage (HV) TFT structures.
doi_str_mv 10.1149/1.2902313
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title High Voltage, Moderate Current Thin Film Transistor for Actuator Applications
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