Impact of Thin La2O3 Insertion for HfO2 MOSFET

The impact of La2O3 insertion for HfO2 gated MOSFET is presented. The origin of a large negative shift in flat band voltage with La2O3 insertion has been carefully extracted to be the dipole presented at La2O3/SiO2 interface. An improvement in effective electron mobility without degrading the interf...

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Bibliographic Details
Main Authors: Kakushima, Kuniyuki, Okamoto, Kouichi, Adachi, Manabu, Tachi, Kiichi, Sato, Soushi, Kawanago, Takamasa, Song, Jaeyeol, Ahmet, Parhat, Sugii, Nobuyuki, Tsutsui, Kazuo, Hattori, Takeo, Iwai, Hiroshi
Format: Conference Proceeding
Language:English
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Summary:The impact of La2O3 insertion for HfO2 gated MOSFET is presented. The origin of a large negative shift in flat band voltage with La2O3 insertion has been carefully extracted to be the dipole presented at La2O3/SiO2 interface. An improvement in effective electron mobility without degrading the interfacial state density has been performed with thin La2O3 insertion for HfO2 MOSFET.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2908613