Mist Deposition of Organic Semiconductors for Light Emitting Diodes

In this work the process of mist deposition is explored as a method used to deposit organic semiconductors for applications in OLEDs. The deposition kinetics of a specially formulated hole transport agent (AG I) from Agiltron were studied. The results indicate that the mist deposited film thickness...

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Bibliographic Details
Published in:ECS transactions 2008-04, Vol.11 (25), p.73-79
Main Authors: Shanmugasundaram, Karthik, Price, Steven, Li, Wenguang, Jiang, Hua, Wang, Qingwu, Ruzyllo, J.
Format: Article
Language:English
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Summary:In this work the process of mist deposition is explored as a method used to deposit organic semiconductors for applications in OLEDs. The deposition kinetics of a specially formulated hole transport agent (AG I) from Agiltron were studied. The results indicate that the mist deposited film thickness varies linearly with precursor concentration, deposition time, and substrate potential. AFM characterization shows distinct stages in the film evolution process. The growth of secondary layers was observed before the formation of a complete initial film layer. A working blue OLED with the hole transport and photo emissive layers deposited by mist deposition was demonstrated.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2930796