In-Situ Assessment of Macropore Growth in Low-Doped n-Type Silicon

Understanding pore growth in semiconductors in detail needs some in-situ information about the processes occurring in a growing pore. It is shown that dual-mode in-situ FFT impedance spectroscopy can provide useful data for macropore etching in n-type Si under back side illumination. A new illuminat...

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Bibliographic Details
Main Authors: Carstensen, Jürgen, Cojocaru, Ala, Leisner, Malte, Föll, Helmut
Format: Conference Proceeding
Language:English
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Summary:Understanding pore growth in semiconductors in detail needs some in-situ information about the processes occurring in a growing pore. It is shown that dual-mode in-situ FFT impedance spectroscopy can provide useful data for macropore etching in n-type Si under back side illumination. A new illumination mode is used alternating with the conventional current-voltage mode, and data evaluation is based on an advanced model developed for this kind of pore etching. The principles of the technique and the basics of the model are introduced and illustrated by a number of examples, some of which show new kinds of pore growth modes.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2982539