Germanium Bonding to AL2O3

Germanium has been bonded to both single crystal Al2O3 (sapphire) as well as fine grain Al2O3. A germanium to sapphire bonding energy of 3 J/m2 has been measured after a 200 oC bond anneal. Micro voids formed between the germanium/sapphire interface can be removed by employing an interfacial layer o...

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Bibliographic Details
Published in:ECS transactions 2008-10, Vol.16 (8), p.407-414
Main Authors: Baine, Paul T., Gamble, Harold, Armstrong, Brian, Mitchell, S. J. N., McNeill, David, Rainey, Paul, Low, Yee, Bain, Mike
Format: Article
Language:English
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Summary:Germanium has been bonded to both single crystal Al2O3 (sapphire) as well as fine grain Al2O3. A germanium to sapphire bonding energy of 3 J/m2 has been measured after a 200 oC bond anneal. Micro voids formed between the germanium/sapphire interface can be removed by employing an interfacial layer of silicon dioxide on either surface. Patterning the sapphire into a grid pattern prior to bonding creates an escape path for trapped gas or moisture allowing micro void free direct bonding to be achieved. Modifying the surface of the fine grain Al2O3 surface with a polycrystalline silicon deposition and polish creates a surface, having an rms roughness of 1.5nm(measured over a 250µm square area), suitable for bonding. Techniques employed in the germanium sapphire bonding can then be used in the bonding of fine grain Al2O3 to germanium.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2982894