Etch Rates of Ge, GaAs and InGaAs in Acids, Bases and Peroxide Based Mixtures

Si has dominated semiconductor industry for decades. However, new materials are appearing in this field such as Ge, GaAs and InxGa1-xAs. In semiconductor processing several wet chemical steps are used including cleaning, etching and stripping. Knowledge of etch rates in these solutions is of great i...

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Bibliographic Details
Main Authors: Sioncke, Sonja, Brunco, David P., Meuris, Marc, Uwamahoro, Olivier, Van Steenbergen, Jan, Vrancken, Evi, Heyns, Marc M.
Format: Conference Proceeding
Language:English
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Summary:Si has dominated semiconductor industry for decades. However, new materials are appearing in this field such as Ge, GaAs and InxGa1-xAs. In semiconductor processing several wet chemical steps are used including cleaning, etching and stripping. Knowledge of etch rates in these solutions is of great importance. In this paper, an etch rate study was performed for Ge, GaAs and InxGa1-xAs in several wet chemical cleaning solutions. The chemistries studied include acids (HCl, HF, HNO3, H2SO4, H3PO4, H2O2) and bases (NH4OH) and peroxide based mixtures. It has been found that etch rates are much higher than for Si due to the formation of soluble oxides. Therefore, "fine-tuning" of the chemistries is a prerequiste when introducing these materials in microelectronic industry.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2986802