Electrical Activity of Dislocations and Defects in Strained Si and Ge Based Devices

This paper reports on the Solid Phase Epitaxial Regrowth (SPER) of phosphorus implanted pre-amorphized p-type germanium at 350 oC using Rapid Thermal Annealing and focuses more specifically on the P concentration dependence of the regrowth velocity. This is studied by a combination of Rutherford Bac...

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Main Authors: Simoen, Eddy R., Eneman, Geert, Verheyen, Peter, Loo, Roger, Bargallo Gonzalez, Mireia, Claeys, Cor
Format: Conference Proceeding
Language:English
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Summary:This paper reports on the Solid Phase Epitaxial Regrowth (SPER) of phosphorus implanted pre-amorphized p-type germanium at 350 oC using Rapid Thermal Annealing and focuses more specifically on the P concentration dependence of the regrowth velocity. This is studied by a combination of Rutherford Backscattering in the channeling mode (RBS-C) and Secondary Ion Mass Spectrometry (SIMS). As will be shown, different regimes can be distinguished whereby for chemical concentrations up to 4-5x1020 cm-3 an enhanced recrystallization occurs compared with undoped amorphized Ge. Above this metastable solid solubility limit, the regrowth is retarded, due to the redistribution and snow plow of the excess P across the amorphous/crystalline interface. It will also be demonstrated that during SPER at 350 oC, limited P-diffusion occurs even at the highest implantation dose studied.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2986808