Optical Bleaching of Thin Film Ge on Si

Thin film Ge on Si is a potential active material candidate for electrically pumped monolithically integrated Si-based light emitters. Theoretical analysis has shown that a combination of strain and n-type doping can modify the band structure of Ge so that it exhibits direct bandgap properties. Direc...

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Bibliographic Details
Main Authors: Sun, Xiaochen, Liu, Jifeng, Kimerling, Lionel, Michel, Jurgen
Format: Conference Proceeding
Language:English
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Summary:Thin film Ge on Si is a potential active material candidate for electrically pumped monolithically integrated Si-based light emitters. Theoretical analysis has shown that a combination of strain and n-type doping can modify the band structure of Ge so that it exhibits direct bandgap properties. Direct band-to- band optical transition is observed from the room temperature photoluminescence at around 1550nm. An optical bleaching ef- fect occurring in lock-in pump-probe measurements indicates a precursor to optical net gain.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2986848