Optical Bleaching of Thin Film Ge on Si

Thin film Ge on Si is a potential active material candidate for electrically pumped monolithically integrated Si-based light emitters. Theoretical analysis has shown that a combination of strain and n-type doping can modify the band structure of Ge so that it exhibits direct bandgap properties. Direc...

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Main Authors: Sun, Xiaochen, Liu, Jifeng, Kimerling, Lionel, Michel, Jurgen
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Liu, Jifeng
Kimerling, Lionel
Michel, Jurgen
description Thin film Ge on Si is a potential active material candidate for electrically pumped monolithically integrated Si-based light emitters. Theoretical analysis has shown that a combination of strain and n-type doping can modify the band structure of Ge so that it exhibits direct bandgap properties. Direct band-to- band optical transition is observed from the room temperature photoluminescence at around 1550nm. An optical bleaching ef- fect occurring in lock-in pump-probe measurements indicates a precursor to optical net gain.
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title Optical Bleaching of Thin Film Ge on Si
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